发明名称 CRYSTAL SENSOR MADE BY ION IMPLANTATION
摘要 <p>Disclosed is a method for producing a crystal sensor. The method includes selecting a crystal configured to sense a property of interest. The method further includes implanting ions in the crystal using ion-implantation to produce a conductive region within the crystal where the conductive region is capable of providing a signal to sense the property of interest. Also disclosed is a method and apparatus for estimating a property of interest using the crystal sensor in a borehole penetrating the earth.</p>
申请公布号 EP2786178(A1) 申请公布日期 2014.10.08
申请号 EP20120854505 申请日期 2012.11.12
申请人 BAKER HUGHES INCORPORATED;LIU, YI;MONTEIRO, OTHON;SANDERLIN, KERRY L.;CSUTAK, SEBASTIAN 发明人 LIU, YI;MONTEIRO, OTHON;SANDERLIN, KERRY L.;CSUTAK, SEBASTIAN
分类号 G01V3/18;E21B47/10;E21B47/12;E21B49/10;G01N29/02;G01N29/24;G01V3/32;H02N2/00 主分类号 G01V3/18
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