发明名称 MASK FOR FORMING PATTERN WITH DOUBLE STRUCTURE AND METHOD OF MANUFACTURING THIS
摘要 <p>The present invention relates to a mask for forming pattern with a double layered structure and a manufacturing method thereof. A mask for forming pattern with a double layered structure and a manufacturing method thereof are featured by comprising a plurality of mask layers where an opening pattern part is formed respectively, corresponding to a pattern to be formed; and a micro opening pattern part formed through connecting common penetrated part of the plural opening pattern parts as the mask layers are stacked in order and combined, and the opening pattern parts are stacked and unevenly placed apart from each other. According to the present invention, a mask where micro pattern is formed can be provided without using expensive mask manufacturing equipment which is capable of micro machining, and mask manufacturing costs can be greatly decreased because the mask where micro pattern is formed can be manufactured through a simple process with ordinary processing equipment.</p>
申请公布号 KR20140118371(A) 申请公布日期 2014.10.08
申请号 KR20130034145 申请日期 2013.03.29
申请人 SAM HAN VACUUM TECH CO., LTD. 发明人 KIM, BUN JOONG
分类号 H01L21/027;H01L21/32 主分类号 H01L21/027
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