发明名称 |
METHOD FOR SELECTING POLYCRYSTALLINE SILICON BAR, AND METHOD FOR PRODUCING SINGLE-CRYSTALLINE SILICON |
摘要 |
Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2 × standard deviation (µ ± 2Ã) found for any one of the Miller indices <111>, <220>, <311> and <400>, the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon. |
申请公布号 |
EP2692909(A4) |
申请公布日期 |
2014.10.08 |
申请号 |
EP20120791960 |
申请日期 |
2012.04.04 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
MIYAO, SHUICHI;OKADA, JUNICHI;NETSU, SHIGEYOSHI |
分类号 |
C30B29/06;C01B33/035;C30B35/00;G01N23/207 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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