POWER SEMICONDUCTOR DEVICE AND FABRICATING OF THE SAME

摘要

The present invention relates to a power semiconductor device which includes trench gates which are separated from each other with a constant distance; a current increase part which is formed between the trench gates and includes gate oxide which is formed on an emitter layer of a first conductivity type and the surface of the trench gate; and a tolerance improvement part which is formed between the trench gates and includes a body layer of a second conductivity type, a stop layer formed on the surface of the trench gate, and gate oxide which has a thinner thickness compared to the thickness of the gate oxide of the current increase part.