| 摘要 |
<p>Disclosed is a nonvolatile resistive random access memory. The nonvolatile resistive random access memory includes an upper electrode, a lower electrode, an ion supply layer formed on the lower electrode, and a resistance change layer formed on the ion supply layer. The ion supply layer includes copper (Cu)-doped carbon (C). A low-power switching operation is performed because the optimal filament is formed by limiting the number of supplied ions, without using the existing method that supplies infinite ions by using a metal electrode.</p> |
