发明名称 METHOD OF PRODUCING A SILICON-ON-INSULATOR ARTICLE
摘要 <p>A method of producing a silicon-on-insulator article, the method including: forming a first aluminium nitride layer thermally coupled to a first silicon substrate; forming a second aluminium nitride layer thermally coupled to a second substrate, the second substrate including at least a surface layer of silicon; bonding the first and second aluminium nitride layers of the first and second substrates together so that the first and second aluminium nitride layers are disposed between the first and second substrates; and removing most of the second substrate to leave a layer of silicon that is electrically insulated from but thermally coupled to the first silicon substrate by the first and second aluminium nitride layers.</p>
申请公布号 KR20140118984(A) 申请公布日期 2014.10.08
申请号 KR20147013004 申请日期 2012.11.02
申请人 THE SILANNA GROUP PTY LTD. 发明人 BRAWLEY ANDREW JOHN;ATANACKOVIC PETAR BRANKO;BLACK ANDREW JOHN;LIM YONG CHEOW GARY
分类号 H01L21/84;H01L21/20;H01L27/12 主分类号 H01L21/84
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