| 摘要 |
Provided is a technology of forming a film having an excellent characteristic at a sufficient rate. Sputter voltage is applied to an aluminum target object to generate first plasma in a processing space. Simultaneously, high-frequency current is applied to an inductive coupling antenna having less than one winding number, thereby generating an inductive-coupling type of second plasma in the processing space. The aluminum target object is sputtered by supplying sputter gas and oxygen into the processing gas, and an aluminum oxide film is formed on a target object (9) through a reactive sputtering process. At least first plasma is generated in the processing space, and the aluminum target object is sputtered by supplying the sputter gas into the processing space, thereby forming an aluminum film on the target object (9). The target object (9) having one of the aluminum oxide film and the aluminum film is not exposed to the atmosphere, but the other film is laminated on one film formed on the target object (9). |
