发明名称 Multi bit OTP(One Time Programmable) memory device using multi plug and methods of manufacturing and operating the same
摘要 A memory device may include a cathode, an anode, a link connected to the anode, and a first connection element that connects the link to the cathode. The link and the anode may be located in a position lower than that of the cathode or the link and the anode may be located in a position higher than that of the cathode. Also, the cathode, the anode, the link, and the first connection element may be formed on the same plane.
申请公布号 KR101446332(B1) 申请公布日期 2014.10.08
申请号 KR20080020200 申请日期 2008.03.04
申请人 发明人
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
代理机构 代理人
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