Graphene devices and methods of fabricating the same

摘要

A graphene device includes: a semiconductor substrate (110) having a first region (110A, 110B) and a second region (110C); a graphene layer (120) on the first region, but not on the second region of the semiconductor substrate; a first electrode (130) on a first portion of the graphene layer; a second electrode (140) on a second portion of the graphene layer; an insulating layer (160) between the graphene layer and the second electrode; and a third electrode (150) on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.