发明名称 |
SEMICONDUCTOR STRUCTURE ABLE TO RECEIVE ELECTROMAGNETIC RADIATION, SEMICONDUCTOR COMPONENT AND PROCESS FOR FABRICATING SUCH A SEMICONDUCTOR STRUCTURE |
摘要 |
<p>A semiconducting structure configured to receive electromagnetic radiation and transform the received electromagnetic radiation into an electric signal, the semiconductor structure including a semiconducting support within a first surface defining a longitudinal plane, a first zone with a first type of conductivity formed in the support with a second zone with a second type of conductivity that is opposite of the first type of conductivity to form a semiconducting junction. A mechanism limiting lateral current includes a third zone formed in the support in lateral contact with the second zone, the third zone having the second type of conductivity for which majority carriers are electrons. The third zone has a sufficient concentration of majority carriers to have an increase in an apparent gap due to a Moss-Burstein effect.</p> |
申请公布号 |
EP2786426(A1) |
申请公布日期 |
2014.10.08 |
申请号 |
EP20120790921 |
申请日期 |
2012.11.27 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
GRAVRAND, OLIVIER;DESTEFANIS, GÉRARD |
分类号 |
H01L31/103;H01L31/18 |
主分类号 |
H01L31/103 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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