发明名称 |
METHOD OF FABRICATING N-TYPE SEMICONDUCTOR USING N-DOPED REDUCED GRAPHENE OXIDE |
摘要 |
<p>According to an embodiment of the present invention, nitrogen-doped reduced graphene oxide (N-doped rGO) and a method of fabricating n-type semiconductor using the same comprise: a step for creating a graphene oxide (GO); a step for creating partially reduced graphene oxide (PrGO-IL) by reacting the graphene oxide (GO) and ionic liquid to an organic solvent; a step for applying the partially reduced graphene oxide (PrGO-IL) to a substrate by a spin-coating method; and a step for creating N-doped rGO by annealing the applied PrGO-IL. Therefore, n-type semiconductor can be manufactured using N-doped rGO, and application to complementary circuit is possible by integrating with ordinary p-type graphene.</p> |
申请公布号 |
KR20140118282(A) |
申请公布日期 |
2014.10.08 |
申请号 |
KR20130033906 |
申请日期 |
2013.03.28 |
申请人 |
INTELLECTUAL DISCOVERY CO., LTD. |
发明人 |
LEE, HYO YOUNG |
分类号 |
H01L21/336;B82B3/00;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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