| 摘要 |
<p>The present invention relates to a hydrogen sensor and a method for manufacturing the same. The hydrogen sensor includes i) a substrate, ii) a first metal oxide semiconductor formed on the substrate, and iii) a second metal oxide semiconductor which is placed apart from the first metal oxide semiconductor and is formed on the substrate. The first metal oxide semiconductor includes i) a source electrode located on the substrate, ii) a drain electrode located on the substrate, iii) a channel layer which interconnects the source electrode and the drain electrode with each other, iv) a gate insulation layer located on the channel layer, v) a gate electrode located on the gate insulation layer, and vi) a plurality of nano-metal catalysts which are formed on the outer surface of the gate electrode and are applied to contact hydrogen.</p> |
