| 摘要 |
<p>A plasma treatment device includes a dielectric window containing SiO2. The insulating film to be etched comprises silicon carbonitride. In a first plasma treatment step, a processing gas which contains no oxygen gas and contains CH2F2, etc, is used to deposit a protective film. In a second plasma treatment step, a processing gas which contains oxygen gas and contains CH3F, etc. is used to etch away the top and other portions of a part having a convex cross-sectional shape.</p> |
