发明名称 CRYSTAL PRODUCTION METHOD
摘要 A crystal production method according to the present invention includes a film formation and crystallization step of spraying a raw material powder containing a raw material component to form a film containing the raw material component on a seed substrate containing a single crystal at a predetermined single crystallization temperature at which single crystallization of the raw material component occurs, and crystallizing the film containing the raw material while maintaining the single crystallization temperature. In the film formation and crystallization step, preferably, the single crystallization temperature is 900°C or higher. Furthermore, in the film formation and crystallization step, preferably, the raw material powder and the seed substrate are each a nitride or an oxide.
申请公布号 EP2636771(A4) 申请公布日期 2014.10.08
申请号 EP20110837959 申请日期 2011.10.31
申请人 NGK INSULATORS, LTD. 发明人 KOBAYASHI, NOBUYUKI;MAEDA, KAZUKI;KONDO, KOICHI;NANATAKI, TSUTOMU;IMAI, KATSUHIRO;YOSHIKAWA, JUN
分类号 C30B1/04;B05D1/06;C04B35/64;C23C24/04 主分类号 C30B1/04
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