| 摘要 |
Provided is a source gas supply unit capable of accurately controlling a flow rate of a vaporized raw material contained in a source gas by a simple method. A source gas supply unit for supplying a source gas to a film forming unit for forming a film on a substrate (W), includes: a carrier gas supply unit (41) for supplying a carrier gas, of which the flow rate is controlled, into a raw material tank (3) accommodating a raw material (300); and a flow rate measuring unit (22) for measuring a flow rate of the source gas containing the vaporized source material. A control unit (5) supplies the carrier gas to the raw material tank (3) while varying a flow rate of the carrier gas without forming a film on a substrate, and stores a vaporization flow rate table (51) showing the correspondence between a vaporization flow rate of the vaporized raw material contained in a source gas and a carrier gas flow rate set value. In addition, the control unit (5) obtains a carrier gas flow rate set value corresponding to a specified vaporization flow rate set value received from an outside by using the vaporization flow rate table (51), and generates the source gas by supplying the carrier gas into the raw material tank (3) based on the obtained carrier gas flow rate set value in order to supply the generated source gas to a film forming unit. |
