TEMPERATURE SENSING DEVICE USING REDUCED GRAPHENE OXIDE AND FABRICATION METHOD THEREOF

摘要

The present invention is to detect temperatures and infrared rays using reduced graphene oxides (R-GO) as the active layer of a field effect transistor (FET), and to prevent influences on the electrical characteristics of the FET by forming an encapsulation layer for protecting an R-GO layer from surrounding environment. A temperature detecting element according to the present invention comprises a substrate; a gate electrode formed on the substrate; a gate insulation film covering the gate electrode; the active layer formed on the gate insulation film, and formed of the reduced graphene oxides capable of detecting the temperatures; a source and a drain electrode formed on the active layer; and the encapsulation layer covering at least the active layer.