POWER SEMICONDUCTOR MODULE AND METHOD FOR PRODUCING A POWER SEMICONDUCTOR MODULE

摘要

The present invention relates to a power semiconductor module and a method for manufacturing the same. The power semiconductor module includes a direct current voltage load connector having a first housing part with a switch and a structure unit. The direct current voltage load connector includes first and second direct current voltage load connection elements. The first direct current voltage load connection element includes a first through hole portion disposed in the switch. The second direct current voltage load connection element includes a second through hole portion disposed in the switch. A gap is formed between the first and second through hole portions. The first and second through hole portions are surrounded by an elastomer. The elastomer fills the gap. The elastomer is connected to the first and second through hole portions in a condensing scheme so that the first and second through hole portions are sealed from the first housing part. The direct current voltage load connection elements are sealed from a housing of the power semiconductor module by high reliable durability for heat cycling. A distance between the direct current voltage load connection elements may be configured to be small.