发明名称 RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, METHOD FOR MANUFACTURING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, AND RAMAN LASER LIGHT SOURCE USING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE
摘要 A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate.
申请公布号 EP2787388(A1) 申请公布日期 2014.10.08
申请号 EP20130831618 申请日期 2013.03.08
申请人 JAPAN SCIENCE AND TECHNOLOGY AGENCY 发明人 TAKAHASHI, YASUSHI;INUI, YOSHITAKA;ASANO, TAKASHI;NODA, SUSUMU;CHIHARA, MASAHIRO
分类号 G02F1/365;G02B6/122;G02F1/025;H01S3/30 主分类号 G02F1/365
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