发明名称 |
RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, METHOD FOR MANUFACTURING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE, AND RAMAN LASER LIGHT SOURCE USING RAMAN SCATTERING PHOTOENHANCEMENT DEVICE |
摘要 |
A Raman scattered light enhancement device including a waveguide provided in a photonic crystal (20) made of a semiconductor substrate in which holes (20a) are formed. The waveguide has resonant modes with respect to incident light at a plurality of frequencies. A difference in frequency between one resonant mode and another resonant mode is equal to a Raman shift frequency of the semiconductor substrate. A waveguide forming direction with respect to a crystal plane orientation of the semiconductor substrate is set so as to maximize a Raman transition probability which is represented by electromagnetic field distribution of the two resonant modes and a Raman tensor of the semiconductor substrate. |
申请公布号 |
EP2787388(A1) |
申请公布日期 |
2014.10.08 |
申请号 |
EP20130831618 |
申请日期 |
2013.03.08 |
申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
TAKAHASHI, YASUSHI;INUI, YOSHITAKA;ASANO, TAKASHI;NODA, SUSUMU;CHIHARA, MASAHIRO |
分类号 |
G02F1/365;G02B6/122;G02F1/025;H01S3/30 |
主分类号 |
G02F1/365 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|