METHOD FOR DOPING A SEMICONDUCTOR BODY, AND SEMICONDUCTOR COMPONENT

摘要

The invention relates to a method for doping a semiconductor body (21) with a targeted lateral variation of the doping concentration in the semiconductor body (21), comprising at least the following steps: whole-area irradiation of the semiconductor body (21) over a surface (22) with protons having a predetermined implantation energy, wherein crystal defects arise in an irradiated semiconductor zone (28) and the protons penetrate right into an end-of-range region (29) of the semiconductor body (21) arranged at a distance from the surface (22), production of at least one edge chamfer (31, 32) in an edge region (30) of the surface (22) of the semiconductor body (21) with a predetermined slope angle (33, 34), heat treatment of the semiconductor body (21) at least in the region of the semiconductor zone (28), wherein the temperature and the time duration are coordinated with one another in such a way that the crystal defects diffuse from the semiconductor zone (28) in the direction of the surface (22) and the protons diffuse from the end-of-range region (29) in the direction of the surface (22) and that an n-type doping of the semiconductor zone (28) with hydrogen-induced donors arises in the end-of-range region (29) and between the surface (22) and the end-of-range region (29). Furthermore, the invention relates to a semiconductor component produced by means of the method.