发明名称 |
Cascoded semiconductor devices |
摘要 |
The invention provides a cascode transistor circuit with a depletion mode transistor and a switching device. A gate bias circuit is connected between the gate of the depletion mode transistor and the low power line. The gate bias circuit is adapted to compensate the forward voltage of a diode function of the switching device. The depletion mode transistor and the gate bias circuit are formed as part of an integrated circuit. |
申请公布号 |
EP2787641(A1) |
申请公布日期 |
2014.10.08 |
申请号 |
EP20130162597 |
申请日期 |
2013.04.05 |
申请人 |
NXP B.V. |
发明人 |
BÜTHKER, HENRICUS CORNELIS JOHANNES;ROSE, MATTHIAS |
分类号 |
H03K17/567;H03K17/0812 |
主分类号 |
H03K17/567 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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