| 主权项 |
1. A rectifier with a vertical MOS structure, the rectifier comprising:
a semiconductor substrate, wherein a first multi-trench structure is formed in a first side of the semiconductor substrate, and a second multi-trench structure is formed in a second side of the semiconductor substrate; a wet oxide layer formed on a surface of the first multi-trench structure and in the semiconductor substrate; a mask layer formed on the first side of the semiconductor substrate corresponding to the first multi-trench structure and formed on the wet oxide layer; a gate oxide layer formed on a surface of the second multi-trench structure; a gate dielectric layer formed on a part of a surface of the gate oxide layer; a first polysilicon structure formed on the gate dielectric layer; a polysilicon oxide layer formed on the first polysilicon structure; a second polysilicon structure formed on the gate dielectric layer and the polysilicon oxide layer; a plurality of doping regions formed on a region between the semiconductor substrate and the second multi-trench structure, and located beside the mask layer; and a metal sputtering layer formed on the doped regions, the gate oxide layer and the second polysilicon structure corresponding to the second multi-trench structure, and formed on the mask layer corresponding to the first multi-trench structure, wherein the mask layer is exposed. |
