Power device with solderable front metal

摘要

Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson.

主权项

1. A III-nitride power semiconductor device including a first transistor comprising:
a first III-nitride layer; a second III-nitride layer forming a heterojunction with said first III-nitride layer; a gate nitride, a source, and a drain over said second III-nitride layer; a top metal layer and a bottom metal layer on said second III-nitride layer, said bottom metal layer including a source contact over said source, a drain contact over said drain, and a gate contact over said gate nitride; a plurality of vias connecting said source contact, said drain contact, and said gate contact to said top metal layer; a solderable front metal over said top metal layer.