Methods for pretreatment of group III-nitride depositions

摘要

Embodiments of the present disclosure relate to methods for pretreatment of substrates and group III-nitride layers for manufacturing devices such as light emitting diodes (LEDs), laser diodes (LDs) or power electronic devices. One embodiment of the present disclosure provides a method including providing one or more substrates having an aluminum containing surface in a processing chamber and exposing a surface of each of the one or more substrates having an aluminum containing surface to a pretreatment gas mixture to form a pretreated surface. The pretreatment gas mixture includes ammonia (NH3), an aluminum halide gas (e.g., AlCl3, AlCl) and an etchant containing gas that includes a halogen gas (e.g., Cl2) or hydrogen halide gas (e.g., HCl).

主权项

1. A method, comprising:
providing one or more substrates having an aluminum containing surface in a processing chamber; and exposing a substrate surface of each of the one or more substrates to a first pretreatment gas mixture to form a pretreated surface of each of the one or more substrates by flowing an ammonia gas and a hydrogen halide gas to a processing region of the processing chamber and flowing an aluminum halide gas to the processing region to allow independent control of etching and deposition during the pretreatment.