| 发明名称 | Method of fabricating a thin-film transistor | ||
| 摘要 | There is provided a method of manufacturing a thin-film device, the method including forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate. The resin material used to form the first substrate has a glass transition temperature of at least 180° C. | ||
| 申请公布号 | US8853014(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US201213414842 | 申请日期 | 2012.03.08 |
| 申请人 | Sony Corporation | 发明人 | Fukuda Toshio;Ishii Yui |
| 分类号 | H01L21/00;H01L29/76;H01L51/00;H01L51/05;H01L27/32;G02F1/1368;G02F1/167 | 主分类号 | H01L21/00 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A method of manufacturing a thin-film device, the method comprising: forming a first substrate on a supporting base by a coating method, the first substrate being formed by using a resin material; forming a second substrate on the first substrate by using any one of a thermosetting resin and energy ray-curable resin; forming an active element on the second substrate; and removing the supporting base from the first substrate, wherein the resin material used to form the first substrate has a glass transition temperature of at least 180° C. | ||
| 地址 | JP | ||