发明名称 |
Memory controller for nonvolatile memory device, memory system comprising memory controller, and related methods of operation |
摘要 |
A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding. |
申请公布号 |
US8856621(B2) |
申请公布日期 |
2014.10.07 |
申请号 |
US201213606188 |
申请日期 |
2012.09.07 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Eun Hee Seok;Kim Jae Hong;Park Hyung Joon;Yoo Young Kwang |
分类号 |
G11C29/00;G11C11/34;G06F11/10 |
主分类号 |
G11C29/00 |
代理机构 |
Volentine & Whitt, PLLC |
代理人 |
Volentine & Whitt, PLLC |
主权项 |
1. A method of controlling a nonvolatile memory device, comprising:
receiving status register data for at least one memory cell, the status register data indicating a result of a read operation performed on the memory cell using a first read voltage; generating a command control signal based on status estimation information and a select signal, the status estimation information indicating an estimated status of the memory cell based on the status register data; re-reading the memory cell using a second read voltage having a value determined by the command control signal; and generating a coupling group index based on data reliability decision bits indicating reliability of data that has been re-read from the memory cell, additional data, and the select signal. |
地址 |
Suwon-si, Gyeonggi-do KR |