| 发明名称 | Electromagnetic shield and associated methods | ||
| 摘要 | Semiconductor devices are described, along with methods and systems that include them. One such device includes a diffusion region in a semiconductor material, a terminal coupled to the diffusion region, and a field plate coupled to the terminal and extending from the terminal over the diffusion region to shield the diffusion region. Additional embodiments are also described. | ||
| 申请公布号 | US8853833(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US201113159203 | 申请日期 | 2011.06.13 |
| 申请人 | Micron Technology, Inc. | 发明人 | Mikhalev Vladimir;Smith Michael;Fulford Henry J.;Sharma Puneet;Shafi Zia A. |
| 分类号 | H01L23/552;H01L23/522 | 主分类号 | H01L23/552 |
| 代理机构 | Schwegman Lundberg & Woessner, P.A. | 代理人 | Schwegman Lundberg & Woessner, P.A. |
| 主权项 | 1. An apparatus comprising: a diffusion region in a semiconductor material; a terminal coupled to the diffusion region; a polysilicon structure adjacent to and extending from the diffusion region; and a field plate coupled to the terminal and extending from the terminal over the diffusion region and configured to shield the diffusion region, the field plate extending parallel to the polysilicon structure and comprising a metal wing that extends from the field plate to the polysilicon structure. | ||
| 地址 | Boise ID US | ||