| 摘要 |
A plasma processing apparatus for film deposition is provided to generate high density plasma by an inductive coupling electric field formed between a main electrode and a sub electrode in a horizontal direction so as to improve a film deposition rate. A plasma processing apparatus(100) for film deposition comprises the following units. A chamber(110) has a reaction space. A substrate pallet(120) is installed inside the chamber. A gas spraying unit is installed in an upper part of the substrate pallet. A gas ring equipped with a plurality of spraying holes(172) is installed near the substrate pallet. |
