发明名称 |
Integration of low Rds<sub>on </sub>LDMOS with high sheet resistance poly resistor |
摘要 |
A method for forming a low Rdson LDNMOS and a high sheet resistance poly resistor and the resulting device are provided. Embodiments include forming first, second, and third STI regions in a substrate; forming a P-well in the substrate around the first STI region with a first mask; forming an N-drift region in the substrate between the P-well and the third STI region with the first mask; forming a dielectric layer over the substrate; forming a poly-silicon layer over the dielectric layer; performing an N-drain implant between the second and third STI regions with a second mask; performing a resistance adjustment implant in, but not through, the poly-silicon layer with the second mask; and patterning the poly-silicon and dielectric layers subsequent to performing the resistance adjustment implant to form a gate stack and a poly resistor, the poly resistor being formed over the third STI region and laterally separated from the gate stack. |
申请公布号 |
US8853764(B1) |
申请公布日期 |
2014.10.07 |
申请号 |
US201313832682 |
申请日期 |
2013.03.15 |
申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd |
发明人 |
Zhang Guowei;Chen Deyan |
分类号 |
H01L29/788;H01L21/336;H01L29/66;H01L29/78 |
主分类号 |
H01L29/788 |
代理机构 |
Ditthavong & Steiner, P.C. |
代理人 |
Ditthavong & Steiner, P.C. |
主权项 |
1. A method comprising:
forming first, second, and third shallow trench isolation (STI) regions in a substrate; forming a P-well in the substrate around the first STI region with a first mask; forming an N-drift region in the substrate between the P-well and the third STI region with a second mask; forming a dielectric layer over the substrate; forming a poly-silicon layer over the dielectric layer; performing an N-drain implant between the second and third STI regions with a third mask; performing a resistance adjustment implant in, but not through, the poly-silicon layer with the third mask; and patterning the poly-silicon and dielectric layers subsequent to performing the resistance adjustment implant to form a gate stack and a poly resistor, the poly resistor being formed over the third STI region and laterally separated from the gate stack. |
地址 |
Singapore SG |