Photoelectric device and manufacturing method thereof

摘要

A photoelectric device is disclosed. The photoelectric device includes a semiconductor substrate, first and second semiconductor stacks having opposite conductive types and alternately arranged on a first surface of the semiconductor substrate, and a gap insulation layer formed between the first and second semiconductor stacks. An undercut may be formed in the gap insulation layer. A method of manufacturing a photoelectric device is also disclosed.

主权项

1. A photoelectric device, comprising:
a semiconductor substrate; first and second semiconductor stacks having opposite conductive types, the first and second semiconductor stacks alternately arranged on a first surface of the semiconductor substrate; a gap insulation layer formed between the first and second semiconductor stacks; an undercut formed in the gap insulation layer; and end portions of the first and second semiconductor stacks formed covering a side surface and at least part of an upper surface of the gap insulation layer.