Semiconductor device and method for manufacturing the same

摘要

Ferroelectric capacitors (42) are formed over a semiconductor substrate (10), then, a barrier film (46) directly covering the ferroelectric capacitors (42) is formed. Thereafter, wirings (56a etc.) connected to the ferroelectric capacitors (42) are formed. Further, a barrier film (58) is formed at a position higher than the wirings (56a etc.). In forming the barrier film (46), a film stack is formed, the film stack including at least two kinds of diffusion preventive films (46a and 46b) having different components and preventing diffusion of hydrogen or water.

主权项

1. A method for manufacturing a semiconductor device, comprising:
forming a ferroelectric capacitor over a semiconductor substrate; forming a first barrier film directly covering the ferroelectric capacitor; forming an insulating film over the first barrier film; planarizing the insulating film; forming a third barrier film on the insulating film, the third barrier film being a third stacked film including at least two kinds of diffusion preventive films having different components, forming a first wiring connected to the ferroelectric capacitor; forming a second barrier film over the first wiring so that a side surface and an upper surface of the first wiring is in direct contact with a lower surface of the second barrier film, the third barrier film being between the first barrier film and the second barrier film, performing thermal treatment in an oxygen atmosphere after the forming the third barrier film and before the forming the first wiring, and forming a contact hole that reaches the ferroelectric capacitor in the first barrier film, the insulating film, and the third barrier film after the forming the third barrier film and before the performing the thermal treatment, wherein the forming the first barrier film comprises forming a first stacked film including at least two kinds of diffusion preventive films having different components, and wherein the forming the second barrier film comprises forming a second stacked film including a lower layer and an upper layer, the lower layer being one kind of film selected from a group containing an aluminum oxide film, an aluminum nitride film, and an aluminum oxynitride film, and the upper layer being one kind of film selected from a group containing a titanium oxide film, a tantalum oxide film, and a zirconium oxide film.