Method of photolithography using a fluid and a system thereof

摘要

A photolithographic exposure system for use on a photoresist on a substrate includes an illumination system, a photomask with one or more object patterns, a projection optical exposure system, and a fluid dispensing system. The projection optical exposure system is positioned to project an image of the one or more object patterns toward an image plane. The fluid dispensing system positions a fluid between the projection optical exposure system and the photoresist on the substrate. The fluid has a refractive index value above a refractive index value of water and an absorbance below 0.8 per millimeter at wavelengths between about 180 nm and about 300 nm.

主权项

1. A photolithographic exposure system for use on a photoresist on a substrate, the system comprising:
an illumination system which provides a source of radiation; a photomask with one or more object patterns; a projection optical exposure system positioned to project an image of the one or more object patterns towards an image plane on the photoresist using the radiation from the illumination system; and a liquid with additive dispensing system that positions a liquid with at least one inorganic additive at a concentration of at least about 16% between the projection optical exposure system and the photoresist on the substrate, the liquid with the at least one additive has a refractive index value above a refractive index value of water and an absorbance below 0.8 per millimeter at wavelengths below about 300 nm.