| 发明名称 |
WIRING STRUCTURE, SEMICONDUCTOR DEVICE PROVIDED WITH WIRING STRUCTURE, AND METHOD FOR MANUFACTURING SAID SEMICONDUCTOR DEVICE |
| 摘要 |
<p>There is provided with a wiring structure. The wiring stracture has a damascene wiring structure including a metal wiring. The metal wiring is provided in direct contact with an upper surface of a barrier film (SiC(O, N) film) containing silicon (Si), carbon (C), and at least one of oxygen (O) and nitrogen (N) as constituent components.</p> |
| 申请公布号 |
KR20140117437(A) |
申请公布日期 |
2014.10.07 |
| 申请号 |
KR20147020756 |
申请日期 |
2012.01.31 |
| 申请人 |
TOHOKU UNIVERSITY |
发明人 |
SUGAWA SHIGETOSHI;TERAMOTO AKINOBU;KURODA RIHITO;XUN GU |
| 分类号 |
H01L21/768;H01L21/314;H01L21/316;H01L21/3205;H01L23/52;H01L23/522 |
主分类号 |
H01L21/768 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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