Technique for forming a MEMS device

摘要

In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.

主权项

1. A method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device comprising:
forming a first structural layer above at least one semiconductor device formed on a substrate; and forming a second structural layer above the first structural layer, the second structural layer having a thickness at least two times greater than a thickness of the first structural layer, wherein the MEMS device comprises a portion formed in the second structural layer that increases the mass of a member of the MEMS device formed by a portion of the first structural layer.