| 发明名称 | Interconnect structure and method for forming the same | ||
| 摘要 | A interconnect structure includes a conductive layer formed in a dielectric layer. An adhesion layer is formed between the dielectric layer and a substrate. The adhesion layer has a carbon content ratio greater than a carbon content ratio of the dielectric layer. | ||
| 申请公布号 | US8853831(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US201213460279 | 申请日期 | 2012.04.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Shih Po-Cheng;Peng Yu-Yun;Chou Chia Cheng;Liou Joung-Wei |
| 分类号 | H01L23/58;H01L23/52;H01L21/768;H01L21/02 | 主分类号 | H01L23/58 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A device, comprising: a substrate; an adhesion layer over the substrate, the adhesion layer having a first carbon content ratio; a dielectric layer over and in contact with the adhesion layer, the dielectric layer having a second carbon content ratio, and the first carbon content ratio being greater than the second carbon content ratio; and a conductor in the dielectric layer. | ||
| 地址 | TW | ||