发明名称 Insulation circuit board, and power semiconductor device or inverter module using the same
摘要 The invention relates to a high-voltage insulation circuit board which is used in an electric power apparatus such as an electric power converter or the like such as power semiconductor device, inverter module, or the like and provides an insulation circuit board in which electric field concentration at the end sections of a wiring pattern is reduced, partial discharging is suppressed, and a reliability is high. According to the invention, there is provided an insulation circuit board having: a metal base substrate; and wiring patterns which are formed onto at least one of the surfaces of the metal base substrate through an insulation layer, characterized in that between two adjacent wiring patterns in which an electric potential difference exists among the wiring patterns, at least one or more wiring patterns or conductors which are in contact with the insulation layer and have an electric potential in a range of the electric potential difference between the adjacent wiring patterns are arranged. According to the invention, the electric field concentration at the end sections of the wiring pattern to which a high voltage is applied is reduced and partial-discharge-resistant characteristics are improved.
申请公布号 US8853559(B2) 申请公布日期 2014.10.07
申请号 US201013388450 申请日期 2010.02.24
申请人 Hitachi, Ltd. 发明人 Matsumoto Hironori;Kusukawa Jumpei
分类号 H05K1/11;H01L23/62;H01L25/18;H05K1/02;H01L23/64;H01L23/14;H01L25/07;H05K1/05;H05K1/03;H05K7/00;H05K1/18;H01L23/498 主分类号 H05K1/11
代理机构 Antonelli, Terry, Stout & Kraus, LLP. 代理人 Antonelli, Terry, Stout & Kraus, LLP.
主权项 1. An insulation circuit board comprising: a metal base substrate; an insulation layer; a first wiring pattern which is formed onto at least one surface of the metal base substrate through the insulation layer; a second wiring pattern which is formed onto at least one surface of the metal base substrate through the insulation layer, and a third wiring pattern which is in contact with the insulation layer, at least a portion of the third wiring pattern located between the first wiring pattern and the second wiring pattern where the distance between the first wiring pattern and second wiring pattern is closest, and the third wiring pattern configured not to be coupled to an electric ground potential and configured to divide a voltage between the first wiring pattern and the second wiring pattern, wherein an electric potential difference exists between the first wiring pattern and the second wiring pattern, and wherein the third wiring pattern has an electric potential in a range of the electric potential difference between the first wiring pattern and the second wiring pattern.
地址 Tokyo JP