发明名称 |
Enhanced tunnel field effect transistor |
摘要 |
An enhanced tunnel field effect transistor includes a substrate, a layer of P-I-N structure, a hetero-material layer, a gate dielectric layer, a gate structure and a spacer, in which the layer of P-I-N structure is disposed on the substrate, the hetero-material layer is disposed on portion of the layer of P-I-N structure, the gate dielectric layer is disposed on the hetero-material layer, the gate structure is disposed the gate dielectric layer and a spacer is disposed on a sidewall of the hetero-material layer, the gate dielectric layer, and the gate structure. The hetero-material layer can increase the tunneling efficiency of the enhanced tunnel field effect transistor to increase the conductor current to improve the enhanced tunnel field effect transistor performance. |
申请公布号 |
US8853824(B1) |
申请公布日期 |
2014.10.07 |
申请号 |
US201314031301 |
申请日期 |
2013.09.19 |
申请人 |
National Chiao Tung University |
发明人 |
Wang Pei-Yu;Tsui Bing-Yue |
分类号 |
H01L21/70;H01L29/78;H01L29/10 |
主分类号 |
H01L21/70 |
代理机构 |
Bacon & Thomas, PLLC |
代理人 |
Bacon & Thomas, PLLC |
主权项 |
1. An enhanced tunnel field effect transistor comprises:
a substrate; a layer of P-I-N structure is disposed on said substrate; a hetero-material layer is disposed on said layer of P-I-N structure; a gate dielectric layer is disposed on said hetero-material layer; a gate structure is disposed on said gate dielectric layer, wherein said hetero-material layer, said gate dielectric layer and said gate structure are disposed on portion of said layer of P-I-N structure; and a spacer is disposed on a sidewall of said hetero-material layer, said gate dielectric layer and said gate structure. |
地址 |
Hsinchu TW |