Oxide semiconductor thin film transistor substrate

摘要

An oxide semiconductor thin film transistor (TFT) substrate includes a substrate, a source, a drain, a patterned transparent conductive layer, an oxide semiconductor layer, a gate and a gate dielectric layer. The source and drain are disposed on the substrate. The patterned transparent conductive layer includes a first transparent electrode, a second transparent electrode and a pixel electrode. The first and second transparent electrodes respectively cover an upper surface of the source and an upper surface of the drain. The pixel electrode connects to the drain. The oxide semiconductor layer contacts the first and second transparent electrodes. The gate dielectric layer is interposed between the oxide semiconductor layer and the gate.

主权项

1. An oxide semiconductor thin film transistor (TFT) substrate, comprising:
a substrate; source and a drain disposed on the substrate; a patterned transparent conductive layer including a first transparent electrode, a second transparent electrode and a pixel electrode, the first transparent electrode and the second transparent electrode respectively covering an upper surface of the source and an upper surface of the drain, the pixel electrode connecting to the drain; an oxide semiconductor layer contacting the first transparent electrode and the second transparent electrode; a gate; and a gate dielectric layer interposed between the oxide semiconductor layer and the gate.