Manufacturing method of grating

摘要

The disclosure relates to a method for making a grating. The method includes the following steps. First, a substrate is provided. Second, a photoresist film is formed on a surface of the substrate. Third, a nano-pattern is formed on the photoresist film by nano-imprint lithography. Fourth, the photoresist film is etched to form a patterned photoresist layer. Fifth, a mask layer is covered on the patterned photoresist layer and the surface of the substrate exposed to the patterned photoresist layer. Sixth, the patterned photoresist layer and the mask layer thereon are removed to form a patterned mask layer. Seventh, the substrate is etched through the patterned mask layer by reactive ion etching, wherein etching gases includes carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and argon (Ar2). Finally, the patterned mask layer is removed.

主权项

1. A manufacturing method of a grating, the method comprising:
providing a substrate; forming a photoresist film on a surface of the substrate; forming a nano-pattern on the photoresist film by nano-imprint lithography; etching the photoresist film to form a patterned photoresist layer, wherein the patterned photoresist layer defines a plurality of cavities, and a first part of the surface of the substrate is exposed through the patterned photoresist layer; covering a mask layer on the patterned photoresist layer and entire the first part of the surface of the substrate; removing the patterned photoresist layer and the mask layer thereon to form a patterned mask layer, wherein the patterned mask layer is retained on the first part of the surface of the substrate, and a second part of the surface of the substrate is exposed through the patterned mask layer to form an exposed surface; etching the substrate through the patterned mask layer by reactive ion etching, wherein etching gases used in the reactive ion etching comprise carbon tetrafluoride (CF4), sulfur hexafluoride (SF6) and argon (Ar2), an etching power is in the range of 40 watts to 200 watts, and a plurality of third cavities is formed in the substrate by etching the exposed surface; and removing the patterned mask layer.