| 发明名称 | Micro-pattern forming method, and micro-channel transistor and micro-channel light-emitting transistor forming method using same | ||
| 摘要 | Provided is a method of forming a micropattern according to an aspect of the present invention. The method of forming a micropattern may include forming an organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate, forming a material layer on an entire surface of the substrate having the organic wire or organic-inorganic hybrid wire mask pattern formed thereon, and removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate to allow only the material layer on a portion of the substrate having no organic wire or organic-inorganic hybrid wire mask pattern formed thereon to be remained. | ||
| 申请公布号 | US8852979(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US201113877875 | 申请日期 | 2011.10.06 |
| 申请人 | Postech Academy-Industry Foundation | 发明人 | Min Sung Yong;Kim Tae Sik;Lee Tae-Woo |
| 分类号 | H01L21/00;B81C1/00;H01L51/00;H01L51/10;H01L51/42;H01L51/05 | 主分类号 | H01L21/00 |
| 代理机构 | Myers Bigel Sibley & Sajovec | 代理人 | Myers Bigel Sibley & Sajovec |
| 主权项 | 1. A method of forming a micropattern, the method comprising: forming an organic wire or organic-inorganic hybrid wire mask pattern having a circular or elliptical cross section on a substrate; forming a material layer on an entire surface of the substrate having the organic wire or organic-inorganic hybrid wire mask pattern formed thereon; and removing the organic wire or organic-inorganic hybrid wire mask pattern from the substrate to allow only the material layer on a portion of the substrate having no organic wire or organic-inorganic hybrid wire mask pattern formed thereon to be remained. | ||
| 地址 | KR | ||