NITRIDE BASED LIGHT EMITTING DIODE WITH EXCELLENT ELECTROSTATIC DISCHARGE PROTECTION

摘要

The present invention relates to a nitride based light emitting diode with excellent electrostatic discharge protection, and more specifically a nitride based light emitting diode consisting of a p-type semiconductor layer which includes a first p-clad layer, a second p-clad layer, and a p-contact layer, wherein the ratio of the maximum doping concentration of the p-type dopant to the minimum doping concentration of the p-type dopant in the second p-clad layer is in a specified range.