Methods of recessing an active region and STI structures in a common etch process

摘要

Generally, the present disclosure is directed to various methods of recessing an active region and an adjacent isolation structure in a common etch process. One illustrative method disclosed includes forming an isolation structure in a semiconducting substrate, wherein the isolation structure defines an active area in the substrate, forming a patterned masking layer above the substrate, wherein the patterned masking layer exposes the active area and at least a portion of the isolation structure for further processing, and performing a non-selective dry etching process on the exposed active area and the exposed portion of the isolation structure to define a recess in the substrate and to remove at least some of the exposed portions of the isolation structure.

主权项

1. A method, comprising:
forming an isolation structure in a semiconducting substrate, said isolation structure defining an active area in said substrate; forming a patterned masking layer above said substrate, said patterned masking layer exposing said active area and at least a portion of said isolation structure for further processing; and performing a non-selective dry etching process on said exposed active area and said exposed portion of said isolation structure to define a recess in said substrate and to remove at least some of said exposed portions of said isolation structure.