Phase-change random access memory device and method of manufacturing the same

摘要

A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat absorption layers.

主权项

1. A method of manufacturing phase-change random access memory (PCRAM) device, comprising:
providing a semiconductor substrate; foaming switching elements on the semiconductor substrate; forming a plurality of phase-change structures on the switching elements; and forming heat absorption layers between the plurality of phase-change structures, wherein the forming each of the plurality of phase-change structures includes:
forming a heater material on each of the switching elements;forming a phase-change material on the heater material;forming an upper electrode material on the phase-change material; andetching the heater material, the phase-change material, and the upper electrode material to form a pillar including the lower electrode, the phase-change layer, and the upper electrode.