Resist underlayer film composition and patterning process using the same

摘要

There is disclosed a resist underlayer film composition, wherein the composition contains a polymer obtained by condensation of, at least, one or more compounds represented by the following general formulae (1-1) and/or (1-2), and one or more kinds of compounds, represented by the following general formulae (2-1) and/or (2-2), and/or equivalent bodies thereof. There can be provided an underlayer film composition, especially for a trilayer resist process, that can form an underlayer film having reduced reflectance, (namely, an underlayer film having optimum n-value and k-value as an antireflective film), excellent filling-up properties, high pattern-antibending properties, and not causing line fall or wiggling after etching especially in a high aspect line that is thinner than 60 nm, and a patterning process using the same.;

主权项

1. A resist underlayer film composition, comprising a polymer obtained by condensation of, at least,
one or more compounds represented by the following general formula (1-1), and one or more compounds represented by the following general formula (2-2), and/or equivalent bodies thereof: whereinR1 to R4 independently represent any of a hydrogen atom, a hydroxyl group, or an optionally-substituted saturated or unsaturated organic group having 1 to 30 carbon atoms, wherein at least two of the R1 to R4 are each a hydroxyl group and two substituent groups arbitrarily selected from each of R1 to R4 may be bonded to further form a cyclic substituent group within a molecule;Q represents an optionally-substituted organic group having 1 to 30 carbon atoms, wherein two Qs arbitrarily selected therefrom may be bonded to form a cyclic substituent group within a molecule; andeach of n3 to n6, showing numbers of respective substituent groups, represents an integer of 0 to 2, while satisfying the relationships 0≦n3+n5≦3, 0≦n4+n6≦4, and 2≦n3+n4≦4 in formula (2-2).