Magnetic random access memory with synthetic antiferromagnetic storage layers and non-pinned reference layers

摘要

A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.

主权项

1. A method for fabricating a synthetic antiferromagnetic (SAF) device, the method comprising:
depositing a spacer layer disposed on a reference layer having a first ruthenium (Ru) layer and a second Ru layer; depositing a storage layer on the spacer layer, the storage layer including an additional Ru layer having a thickness of approximately 0 angstroms (Å) to 18 Å; depositing a cap layer on the storage layer; depositing a cobalt iron boron (CoFeB) layer on the spacer layer; depositing a third Ru layer on the CoFeB layer; and depositing an additional CoFeB layer on the third Ru layer.