发明名称 MANUFACTURING METHODS OF SEMICONDUCTOR SUBSTRATE AND THIN FILM TRANSISTOR
摘要 In manufacturing an SOI substrate, in a case where a step is present in a surface to be bonded, a substrate may warp and the contact area becomes small due to the step, an SOI layer having a desired shape cannot be obtained in some cases. However, the present invention provides an SOI substrate having a desired shape even when a step is produced on a surface to be bonded. Between steps on the surface to be bonded, dummy patterns 302 are formed at predetermined intervals, and thus the warp of the substrate to be bonded can be suppressed, the adhesion between the bonded substrates can be ensured, and an SOI layer having a desired shape can be obtained.
申请公布号 KR101447938(B1) 申请公布日期 2014.10.07
申请号 KR20080026126 申请日期 2008.03.21
申请人 发明人
分类号 H01L21/20;H01L29/786 主分类号 H01L21/20
代理机构 代理人
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