发明名称 Inter-cell interference cancellation in flash memories
摘要 Inter-cell interference cancellation is provided for flash memory devices. Data from a flash memory device is processed by obtaining one or more quantized threshold voltage values for at least one target cell of the flash memory device; obtaining one or more hard decision read values for at least one aggressor cell of the target cell; determining an aggressor state of the at least one aggressor cell; determining an interference amount based on the aggressor state; determining an adjustment to the quantized threshold voltage values based on the determined interference amount; and adjusting the quantized threshold voltage values based on the determined adjustment. The quantized threshold voltage values for at least one target cell are optionally re-used from a previous soft read retry operation. The adjusted quantized threshold voltage values are optionally used to determine reliability values and are optionally applied to a soft decision decoder and/or a buffer.
申请公布号 US8854880(B2) 申请公布日期 2014.10.07
申请号 US201313778860 申请日期 2013.02.27
申请人 LSI Corporation 发明人 Chen Zhengang;Haratsch Erich F.
分类号 G11C11/34;G11C11/56;G11C16/04 主分类号 G11C11/34
代理机构 Ryan, Mason & Lewis, LLP 代理人 Ryan, Mason & Lewis, LLP
主权项 1. A method for processing data from a flash memory device, comprising: obtaining one or more quantized threshold voltage values for at least one target cell of said flash memory device; obtaining one or more hard decision read values for at least one aggressor cell of said target cell; determining an aggressor state of said at least one aggressor cell; determining an interference amount based on said aggressor state; determining an adjustment to said one or more quantized threshold voltage values based on said determined interference amount; and adjusting said one or more quantized threshold voltage values based on said determined adjustment.
地址 San Jose CA US