Method of manufacturing semiconductor device and semiconductor device

摘要

A method of manufacturing a semiconductor device comprises a mounting step of mounting a semiconductor element having an Au—Sn layer on a substrate, wherein the mounting step includes a paste supplying step of supplying an Ag paste having an Ag nanoparticle onto the substrate, a device mounting step of mounting a side of the Au—Sn layer of the semiconductor element on the Ag paste, and a bonding step of alloying the Au—Sn layer and the Ag paste to bond the semiconductor element to the substrate, wherein the Au—Sn layer has a content rate of Au of 50 at % to 85 at %.

主权项

1. A method of manufacturing a semiconductor device, comprising:
mounting a semiconductor element having an Au—Sn layer on a substrate, the mounting of the semiconductor element including supplying an Ag paste having an Ag nanoparticle onto the substrate; mounting a side of the Au—Sn layer of the semiconductor element on the Ag paste; alloying the Au—Sn layer and the Ag paste to bond the semiconductor element to the substrate; and volatilizing a volatile solvent in the Ag paste after the supplying of the Ag paste, wherein during the volatilizing, increasing a temperature of the Ag paste to be in a range of 100° C. to 200° C., and wherein the Au—Sn layer has a content rate of Au of 50 at % to 85 at %.