发明名称 |
Semiconductor device for supplying and measuring electric current through a pad |
摘要 |
The present invention relates to a semiconductor device, and more particularly, to a semiconductor memory device capable of supplying and measuring an electric current through a pad. The semiconductor device includes a memory cell, a data pad configured to receive data to be programmed into the memory cell or a write current to be supplied to the memory cell from an external device, and output data read out from the memory cell or a cell current flowing from the memory cell to the external device, and a path switching unit configured to set up a path so that the memory cell and the data pad are directly coupled when a test operation is performed. |
申请公布号 |
US8854907(B2) |
申请公布日期 |
2014.10.07 |
申请号 |
US201213590648 |
申请日期 |
2012.08.21 |
申请人 |
SK Hynix Inc. |
发明人 |
Lym Sang Kug;Kim Dong Keun |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
William Park & Associates Patent Ltd. |
代理人 |
William Park & Associates Patent Ltd. |
主权项 |
1. A semiconductor device, comprising:
a memory cell; a data pad configured to receive data to be programmed into the memory cell or a write current to be supplied to the memory cell and output data read out from the memory cell or a cell current flowing from the memory cell; a sense amplifier configured to read out data stored in the memory cell; an input/output buffer circuit configured to buffer data received through the data pad or drive a signal outputted through the data pad; and a path switching unit connected between the sense amplifier and the input/output buffer circuit, and configured to set up a path so that the memory cell and the data pad are directly coupled when a test operation is performed, and wherein the sense amplifier and the input/output buffer circuit are coupled through a global read data line, and wherein the path switching unit comprises:
a first switching unit connected between the sense amplifier and the global read data line; anda second switching unit connected between the global read data line and the input/output buffer circuit. |
地址 |
Gyeonggi-do KR |