| 发明名称 | Method of programming a nonvolatile memory device and nonvolatile memory device performing the method | ||
| 摘要 | A method of programming a nonvolatile memory device including multi-level cells that store multi-bit data, includes performing a pre-programming operation that programs at least some of the multi-level cells to a plurality of intermediate states which are different from an erased state, and performing a main programming operation that programs the multi-level cells to a plurality of target states corresponding to the multi-bit data. At least some of the intermediate program states have threshold voltage distributions that partially overlap each other. | ||
| 申请公布号 | US8854879(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US201313755448 | 申请日期 | 2013.01.31 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Shim Dong-Kyo;Kim Min-Seok;Kim Tae-Young;Park Ki-Tae;Jeong Jae-Yong |
| 分类号 | G11C16/04;G11C11/56;G11C16/10;G11C16/34 | 主分类号 | G11C16/04 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A method of programming a nonvolatile memory device including multi-level cells that store multi-bit data, the method comprising: performing a pre-programming operation that programs at least some of the multi-level cells to a plurality of intermediate states which are different from an erased state, at least some of the intermediate states having threshold voltage distributions that partially overlap each other; and performing a main programming operation that programs the multi-level cells to a plurality of target states corresponding to the multi-bit data. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||