Junctionless accumulation-mode devices on decoupled prominent architectures

摘要

A junctionless accumulation-mode (JAM) semiconductive device is isolated from a semiconducive substrate by a reverse-bias band below a prominent feature of a JAM semiconductive body. Processes of making the JAM device include implantation and epitaxy.

主权项

1. A junctionless accumulation mode (JAM) device comprising:
a semiconductive first body including a channel region bounded by junctionless source and drain regions, wherein the semiconductive first body is located in a prominence that extends from a bulk semiconductive substrate, and wherein the semiconductive first body includes a first side, an edge, and a second side that is parallel-planar to the first side; a gate electrode that is wrapped around the prominence on each of the first side, the edge, and the second side; a semiconductive second body disposed opposite the edge and between the semiconductive first body and the bulk semiconductive substrate, wherein the semiconductive second body is differently doped from the semiconductive first body, and wherein the semiconductive second body causes a differential bias with the semiconductive first body; and a first semiconductive layer disposed between the bulk semiconductive substrate and the semiconductive second body.